Polarization dependence of linewidth enhancement factor in InGaAs/InGaAsP MQW material

Filamentation and linewidth enhancement factor in InGaAs quantum dot lasers

Linewidth enhancement factor and chirp in quantum dot lasers

Self-validating technique for the measurement of the linewidth enhancement factor in semiconductor lasers.

A new method for measuring the linewidth enhancement factor (α-parameter) of semiconductor lasers is proposed and discussed. The method itself provides an estimation of the measurement error, thus self-validating the entire procedure. The α-parameter is obtained from the temporal profile and the instantaneous frequency (chirp) of the pulses generated by gain switching. The time resolved chirp i...

Gain compression coefficient and above-threshold linewidth enhancement factor in InAs/GaAs quantum dot DFB lasers

We measure, for the first time, the gain compression coefficient and above-threshold linewidth enhancement factor (alpha parameter) in quantum dot (QD) distributed feedback lasers (DFB) by time-resolved-chirp (TRC) characterization. The alpha parameter is measured to be 2.6 at threshold and increases to 8 when the output power of the QD DFB is increased to 3 mW. The dependence of the above-thre...

Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3- m InAs–GaAs Quantum-Dot Lasers

Quantum-dot (QD) lasers exhibit many useful properties such as low threshold current, temperature and feedback insensitivity, chirpless behavior, and low linewidth enhancement factor ( H-factor). Although many breakthroughs have been demonstrated, the maximum modulation bandwidth remains limited in QD devices, and a strong damping of the modulation response is usually observed pointing out the ...